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Email: sales@shunlongwei.com
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SKM200GB063D not recommended for new design Features:
.N channel, homogeneous Silicon structure (NPT – Non punch-through IGBT)
.Low tail current with low temperature dependence
.High short circuit capability, self limiting if term. G is clamped to E
.Pos. temp.-coeff. of V CEsat
.50 % less turn off losses
.30 % less short circuit current
.Very low C ies , C oes , C res
.Latch-up free Fast & soft inverse CAL Diodes
.Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould
.Large clearance (13 mm) and creepage distances (20 mm)
Typical Applications:
.Switching (not for liear use)
.Switched mode power supplies
.AC inverter servo drives
.UPS uninterruptable power supplies
.Welding inverters
Power Igbt Transistor
