#FS200R12PT4 infineon FS200R12PT4 New IGBT module FS200R12PT4 Infineon 1200V/280A/1000W, FS200R12PT4 pictures, FS200R12PT4 price, #FS200R12PT4 supplier
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RoHS: Details
Product: IGBT Silicon Modules
Collector-Emitter Saturation Voltage: 2.15 V
Continuous Collector Current at 25 C: 280 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 1000 W
Minimum Operating Temperature: – 40 C
Packaging: Tray
Technology: Si
Brand: Infineon Technologies
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V
IGBT module FS200R12PT4 Infineon 1200V/280A/1000W
